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HM4441 Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4441 datasheet preview

Datasheet Details

Part number	HM4441
Manufacturer	H&M Semiconductor
File Size	471.55 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4441-HMSemiconductor.pdf

HM4441 Overview

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4441 Key Features

VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Power switching application
Hard switched and high frequency circuits
DC-DC Converter

More Datasheets from H&M Semiconductor

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Part Number	Description
HM4441A	N-Channel Enhancement Mode Power MOSFET
HM4440	N-Channel Enhancement Mode Power MOSFET
HM4440A	N-Channel Enhancement Mode Power MOSFET
HM4443	P-Channel Enhancement Mode Power MOSFET
HM4444	N-Channel Enhancement Mode Power MOSFET
HM4447	P-Channel Enhancement Mode Power MOSFET
HM4449	P-Channel Enhancement Mode Power MOSFET
HM4402A	N-Channel Enhancement Mode Power MOSFET
HM4402B	N-Channel Enhancement Mode Power MOSFET
HM4402C	N-Channel Enhancement Mode Power MOSFET

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