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HM4441 Datasheet

Manufacturer: H&M Semiconductor
HM4441 datasheet preview

HM4441 Details

Part number HM4441
Datasheet HM4441-HMSemiconductor.pdf
File Size 471.55 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM4441 page 2 HM4441 page 3

HM4441 Overview

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4441 Key Features

  • VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation
  • Power switching application
  • Hard switched and high frequency circuits
  • DC-DC Converter

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