HM4485E Description
The +0( uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM4485E Key Features
- VDS =-35V,ID =-A RDS(ON) <7.2mΩ @ VGS=-10V RDS(ON) <12mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits
- DC-DC converter