HM4485E
HM4485E is MOSFET manufactured by H&M Semiconductor.
Description
The +0( uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =-35V,ID =-A RDS(ON) <7.2mΩ @ VGS=-10V RDS(ON) <12mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Application
- Power switching application
- Hard switched and high frequency circuits
- DC-DC converter
Schematic diagram HM4485(
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM4485(
+0(
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
-35 ±20 - - 2.5 -55 To...
