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HM4614 Datasheet N & P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: +0 N and P-Channel Enhancement Mode Power MOSFET.

General Description

The +0 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Key Features

  • N-Channel VDS = 40V,ID =7A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V N-channel P-channel Schematic diagram.
  • P-Channel VDS = -40V,ID = -5A RDS(ON) < 38mΩ @ VGS=-10V RDS(ON).

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