HM4622Q Datasheet | H&M Semiconductor

Description The HM4622Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features - N-channel： VDS =20V,ID =25A RDS(ON)=8.2mΩ (typical) @ VGS=2.5V RDS(ON)=6.2mΩ (typical) @ VGS=4.5V P-Channel： VDS =-20V,ID =-25A RDS(ON)=17.5mΩ (typical) @ VGS=-2.5V RDS(ON)=13mΩ (typical) @ VGS=-4.5V - Excellent gate charge x RDS(ON) product(FOM) - Very low on-resistance RDS(ON) - 150 °C operating temperature - Pb-free lead plating - 100% UIS tested 100% UIS TESTED! Application 100% ∆Vds TESTED! - Pch+Nch plementary MOSFET for DC-FAN - H-Bridge application Ordering Information Part Number HM4622Q Storage Temperature -55°C to +150°C Q1:1.Source 2.Gate 7.Drain 8.Drain Q2:3.Source 4.Gate 5.Drain 6.Drain DFN3X3-8L Plastic Package Package DFN3X3-8L Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Limit Symbol Unit Drain-source voltage V DS -20 Gate-source voltage V...