HM4606
HM4606 is N & P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.
General Features
- N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V
- P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
N-channel
P-channel
Schematic diagram
Marking and pin assignment
Application
- PWM applications
- Load switch
- Power management
SOP-8 top view
Package Marking and Ordering Information
Device Marking Device Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS 30
Gate-Source...
