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HM4606A

Manufacturer: H&M Semiconductor

HM4606A datasheet by H&M Semiconductor.

HM4606A datasheet preview

HM4606A Datasheet Details

Part number HM4606A
Datasheet HM4606A-HMSemiconductor.pdf
File Size 550.57 KB
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
HM4606A page 2 HM4606A page 3

HM4606A Overview

The HM4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

HM4606A Key Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
  • P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
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HM4606A Distributor

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