HM4606B datasheet by H&M Semiconductor.
| Part number | HM4606B |
|---|---|
| Datasheet | HM4606B-HMSemiconductor.pdf |
| File Size | 566.84 KB |
| Manufacturer | H&M Semiconductor |
| Description | N & P-Channel Enhancement Mode Power MOSFET |
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The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
View all H&M Semiconductor datasheets
| Part Number | Description |
|---|---|
| HM4606 | N & P-Channel Enhancement Mode Power MOSFET |
| HM4606A | N & P-Channel Enhancement Mode Power MOSFET |
| HM4606C | N & P-Channel Enhancement Mode Power MOSFET |
| HM4606D | N & P-Channel Enhancement Mode Power MOSFET |
| HM4611 | N and P-Channel Enhancement Mode Power MOSFET |
| HM4611A | N & P-Channel Enhancement Mode Power MOSFET |
| HM4611B | N & P-Channel Enhancement Mode Power MOSFET |
| HM4611Q | N And P-Channel Enhancement Mode MOSFET |
| HM4612 | N & P-Channel Enhancement Mode Power MOSFET |
| HM4612D | N & P-Channel Enhancement Mode Power MOSFET |
