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HM4606B Datasheet N & P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM4606B N and P-Channel Enhancement Mode Power MOSFET.

General Description

The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Key Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width HM4606B HM4606B SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless.

More Datasheets from H&M Semiconductor

Part Number Description
HM4606 N & P-Channel Enhancement Mode Power MOSFET
HM4606A N & P-Channel Enhancement Mode Power MOSFET
HM4606C N & P-Channel Enhancement Mode Power MOSFET
HM4606D N & P-Channel Enhancement Mode Power MOSFET
HM4611 N and P-Channel Enhancement Mode Power MOSFET
HM4611A N & P-Channel Enhancement Mode Power MOSFET
HM4611B N & P-Channel Enhancement Mode Power MOSFET
HM4611Q N And P-Channel Enhancement Mode MOSFET
HM4612 N & P-Channel Enhancement Mode Power MOSFET
HM4612D N & P-Channel Enhancement Mode Power MOSFET

HM4606B Distributor