HM4606B
HM4606B is N & P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
- P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
N-channel
P-channel
Schematic diagram
Marking and pin assignment
Package Marking and Ordering Information
SOP-8 top view
Device Marking Device
Device Package Reel Size
Tape width
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Quantity
2500 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1)
TA=25℃ TA=70℃
Maximum Power Dissipation
TA=25℃...
