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HM4606D Datasheet N & P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM4606D N and P-Channel Enhancement Mode Power MOSFET.

General Description

The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

This device is suitable for use as a load switch or in PWM applications.

General

Key Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V RDS(ON) < 36mΩ @ VGS=4.5V.
  • P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount pack age N-channel P-channel Schematic diagram HM4606D Marking and pin assignment.

HM4606D Distributor