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HM4606D

Manufacturer: H&M Semiconductor

HM4606D datasheet by H&M Semiconductor.

HM4606D datasheet preview

HM4606D Datasheet Details

Part number	HM4606D
Datasheet	HM4606D-HMSemiconductor.pdf
File Size	557.10 KB
Manufacturer	H&M Semiconductor
Description	N & P-Channel Enhancement Mode Power MOSFET

HM4606D Overview

The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.

HM4606D Key Features

N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V RDS(ON) < 36mΩ @ VGS=4.5V
P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount pack age

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Part Number	Description
HM4606	N & P-Channel Enhancement Mode Power MOSFET
HM4606A	N & P-Channel Enhancement Mode Power MOSFET
HM4606B	N & P-Channel Enhancement Mode Power MOSFET
HM4606C	N & P-Channel Enhancement Mode Power MOSFET
HM4611	N and P-Channel Enhancement Mode Power MOSFET
HM4611A	N & P-Channel Enhancement Mode Power MOSFET
HM4611B	N & P-Channel Enhancement Mode Power MOSFET
HM4611Q	N And P-Channel Enhancement Mode MOSFET
HM4612	N & P-Channel Enhancement Mode Power MOSFET
HM4612D	N & P-Channel Enhancement Mode Power MOSFET

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