HM4606C
HM4606C is N & P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.
General Features
- N-Channel VDS = 20V,ID =5.0A RDS(ON) < 59mΩ @ VGS=10V RDS(ON) < 45mΩ @ VGS=4.5V
- P-Channel VDS = -20V,ID = -4.0A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 110mΩ @ VGS=-10V
- High power and current handing capability
- Lead free product is acquired
- Surface mount pack age
N-channel
P-channel
Schematic diagram
Marking and pin assignment
Application
- PWM applications
- Load switch
- Power management
SOP-8 top view
Package Marking and Ordering Information
Device Marking Device Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS...
