HM4606C Datasheet N & P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM4606C N and P-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number	HM4606C
Manufacturer	H&M Semiconductor
File Size	866.65 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4606C-HMSemiconductor.pdf

The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

This device is suitable for use as a load switch or in PWM applications.

General

N-Channel VDS = 20V,ID =5.0A RDS(ON) < 59mΩ @ VGS=10V RDS(ON) < 45mΩ @ VGS=4.5V.
P-Channel VDS = -20V,ID = -4.0A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 110mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount pack age N-channel P-channel Schematic diagram HM4606C Marking and pin assignment.

Part Number	Description
HM4606	N & P-Channel Enhancement Mode Power MOSFET
HM4606A	N & P-Channel Enhancement Mode Power MOSFET
HM4606B	N & P-Channel Enhancement Mode Power MOSFET
HM4606D	N & P-Channel Enhancement Mode Power MOSFET
HM4611	N and P-Channel Enhancement Mode Power MOSFET
HM4611A	N & P-Channel Enhancement Mode Power MOSFET
HM4611B	N & P-Channel Enhancement Mode Power MOSFET
HM4611Q	N And P-Channel Enhancement Mode MOSFET
HM4612	N & P-Channel Enhancement Mode Power MOSFET
HM4612D	N & P-Channel Enhancement Mode Power MOSFET