HM5N06APR
HM5N06APR is manufactured by H&M Semiconductor.
N-Channel Enhancement Mode Power MOSFET
Description
The HM5N06$35 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ)
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
HM5N06'68
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM5N06$35HM5N06$35
SOT-89-3L
Reel Size Ø330mm
Tape width 12mm
Quantity 2500...
