HM5N06R
HM5N06R is manufactured by H&M Semiconductor.
NCE N-Channel Enhancement Mode Power MOSFET
Description
The HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V
（Typ：38mΩ）
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOT-223-3L
Reel Size Ø330mm
Tape width 12mm
Quantity 2500...
