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HM5N06R Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: RM NCE N-Channel Enhancement Mode Power MOSFET.

General Description

The HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

D G General

Key Features

  • VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) S Schematic diagram.

HM5N06R Distributor