HM5N30PR Datasheet | H&M Semiconductor

Silicon N-Channel Power MOSFET General Description： VDSS HM5N30PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) W which reduce the conduction loss, improve switching RDS(ON)TYP Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy...