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HM60P06 Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM60P06 Overview

The HM60P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM60P06 Key Features

  • VDS =-60V,ID =-60A RDS(ON) <17mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Load switch
  • Tape width
  • Quantity

HM60P06 Distributor