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HM60P06K Datasheet

Manufacturer: H&M Semiconductor
HM60P06K datasheet preview

HM60P06K Details

Part number HM60P06K
Datasheet HM60P06K-HMSemiconductor.pdf
File Size 560.73 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM60P06K page 2 HM60P06K page 3

HM60P06K Overview

The HM60P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM60P06K Key Features

  • VDS =-60V,ID =-60A RDS(ON) <17mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Load switch
  • Tape width
  • Quantity

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