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HM6602 Datasheet

Manufacturer: H&M Semiconductor
HM6602 datasheet preview

HM6602 Details

Part number HM6602
Datasheet HM6602-HMSemiconductor.pdf
File Size 1.09 MB
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
HM6602 page 2 HM6602 page 3

HM6602 Overview

The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application.

HM6602 Key Features

  • N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V
  • P-Channel VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

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