Datasheet4U Logo Datasheet4U.com
H&M Semiconductor logo

HM6604 Datasheet

Manufacturer: H&M Semiconductor
HM6604 datasheet preview

HM6604 Details

Part number HM6604
Datasheet HM6604-HMSemiconductor.pdf
File Size 489.24 KB
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
HM6604 page 2 HM6604 page 3

HM6604 Overview

The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

HM6604 Key Features

  • N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V
  • P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

HM6604 Distributor

H&M Semiconductor Datasheets

More from H&M Semiconductor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts