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HM6604 Datasheet

N & P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM6604 Overview

The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

HM6604 Key Features

  • N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V
  • P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

HM6604 Distributor