• Part: HM8205
  • Description: Dual N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 455.55 KB
Download HM8205 Datasheet PDF
H&M Semiconductor
HM8205
Description The HM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features - VDS = 1V,ID = 4A RDS(ON) <45mΩ @ VGS=2.5V RDS(ON) <29mΩ @ VGS=4.5V D1 D2 G1 G2 S1 S2 Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Marking and pin Assignment Application - Battery protection - Load switch - Power management SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package SOT23-6L Reel Size Ø180mm Tape width 8mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power...