• Part: HM8205D
  • Description: Dual N-Channel Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 782.81 KB
Download HM8205D Datasheet PDF
H&M Semiconductor
HM8205D
Description The+0' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. +0' Features - VDS = 20V,ID =A RDS(ON) < 27mΩ @ VGS =4.5V RDS(ON) < 37mΩ @ VGS =2.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery protection - Load switch - Power management Schematic Diagram DFN 2X5 S1 S1 G1 S2 S2 G2 D1/D2 Top View S2 S2 G2 S1 S1 G1 Bottom View Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width +08205'+0'')1;‘PPPP Quantit 3000 units Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit Drain-Source Voltage (VGS=0V) Gate-Source Voltage...