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HM8205D Datasheet

Dual N-channel Trench Power MOSFET

Manufacturer: H&M Semiconductor

HM8205D Overview

The+0' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications.

HM8205D Key Features

  • VDS = 20V,ID =A RDS(ON) < 27mΩ @ VGS =4.5V RDS(ON) < 37mΩ @ VGS =2.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • Battery protection
  • Load switch
  • Power management

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HM8205D Distributor