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HM8205A Datasheet

Dual N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM8205A Overview

The HM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM8205A Key Features

  • VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • Battery protection -Load switch -Power management

HM8205A Distributor