HM55N03D
HM55N03D is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram Marking and pin assignment
100% UIS TESTED! 100% ΔVds TESTED!
Package Marking And Ordering Information
Device Marking
Device
Device Package
DFN5X6-8L
Reel Size
Tape width
Quantity
- Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature...
