HM50P06K Description
uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
HM50P06K Key Features
- VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Load switch
- Tape width
- Quantity