HMM35N120T Description
HMM35N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee HMM35N120T Silicon Carbide Power MOSFET N-Channel Enhancement Mode Package VDS ID @ 25˚C RDS(on) 1200 V 32 A 75.
HMM35N120T Key Features
- SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency