Datasheet Summary
SEMICONDUCTOR
RFD14N05, RFD14N05SM, RFP14N05
December 1995
14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Features
Packaging
- 14A, 50V
- rDS(ON) = 0.100Ω
- Temperature pensating PSPICE Model
- Peak Current vs Pulse Width Curve
JEDEC TO-220AB DRAIN (FLANGE)
SOURCE DRAIN GATE
- UIS Rating Curve
- +175oC Operating Temperature
Description
The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching...
