RFD14N05SM
Overview
The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.
- 14A, 50V
- rDS(ON) = 0.100Ω
- Temperature Compensating PSPICE Model
- Peak Current vs Pulse Width Curve
