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RFD14N05SM - Avalanche Rated N-Channel Enhancement-Mode Power MOSFET

Download the RFD14N05SM datasheet PDF. This datasheet also covers the RFD14N05 variant, as both devices belong to the same avalanche rated n-channel enhancement-mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process.

This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • Packaging.
  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RFD14N05-HARRIS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RFD14N05SM
Manufacturer HARRIS
File Size 85.23 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFET
Datasheet download datasheet RFD14N05SM Datasheet

📁 Similar Datasheet

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RFD14N05SM N-Channel Power MOSFET Fairchild Semiconductor
RFD14N05SM9A N-Channel Power MOSFET Fairchild Semiconductor
RFD14N05 14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor
RFD14N05L 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil Corporation
RFD14N05L N-Channel Logic Level Power MOSFET Fairchild Semiconductor

Other Datasheets by HARRIS

Part Number Description
RFD14N05 Avalanche Rated N-Channel Enhancement-Mode Power MOSFET
RFD10P03L P-Channel Power MOSFET
RFD10P03LSM P-Channel Power MOSFET
RFD16N03L Enhancement-Mode Power MOSFET
RFD16N03LSM Enhancement-Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR RFD14N05, RFD14N05SM, RFP14N05 December 1995 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features Packaging • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE • UIS Rating Curve • +175oC Operating Temperature Description The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.