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RFD14N05 - Avalanche Rated N-Channel Enhancement-Mode Power MOSFET

General Description

The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process.

This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • Packaging.
  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

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Datasheet Details

Part number RFD14N05
Manufacturer HARRIS
File Size 85.23 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFET
Datasheet download datasheet RFD14N05 Datasheet

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RFD14N05LSM N-Channel Logic Level Power MOSFET Fairchild Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR RFD14N05, RFD14N05SM, RFP14N05 December 1995 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features Packaging • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE • UIS Rating Curve • +175oC Operating Temperature Description The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.