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RFD14N05LSM - 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs

Key Features

  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE™ Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD14N05L RFD14N05LSM RFP14N05L.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFD14N05L 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet April 1999 File Number 2246.3 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.