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MRF466 - HG RF POWER TRANSISTOR

General Description

power amplifier applications from 2.0 to 30MHz.

Key Features

  • PG = 15 dB min. at 40 W/30 MHz.
  • IMD3 = -30 dBc max. at 40 W (PEP).
  • Omnigold™ Metalization System.

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Datasheet Details

Part number MRF466
Manufacturer HGSemi
File Size 312.23 KB
Description HG RF POWER TRANSISTOR
Datasheet download datasheet MRF466 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HG Semiconductors MRF466HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. FEATURES: • PG = 15 dB min. at 40 W/30 MHz • IMD3 = -30 dBc max. at 40 W (PEP) • Omnigold™ Metalization System MAXIMUM RATINGS IC 6.0 A VCBO 65 V VCEO 35 V PDISS 175 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.0 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A EC Ø.125 NOM. FULL R J .125 BE C D FE GH I DIM MINIMUM inches / mm A .220 / 5.59 B .785 / 19.94 C .720 / 18.29 D .970 / 24.64 E F .004 / 0.10 G .085 / 2.16 H .160 / 4.06 I J .240 / 6.10 MAXIMUM inches / mm .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .