• Part: HY1804
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 879.10 KB
Download HY1804 Datasheet PDF
HOOYI
HY1804
HY1804 is N-Channel MOSFET manufactured by HOOYI.
HY1804D/U/S Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current - ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.3m H Note - Repetitive rating ; pulse width limiited by junction temperature - - Drain current is limited by junction temperature - - - VD=32V Rating 40 ±20 175 -55 to 175 80 320- - 80 54 62.5 31.2 2.4 110 340- - - Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A W °C/W °C/W m J Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON)...