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HY1804U - N-Channel MOSFET

This page provides the datasheet information for the HY1804U, a member of the HY1804 N-Channel MOSFET family.

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Datasheet Details

Part number HY1804U
Manufacturer HOOYI
File Size 879.10 KB
Description N-Channel MOSFET
Datasheet download datasheet HY1804U Datasheet
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HY1804D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.3mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V Rating 40 ±20 175 -55 to 175 80 320** 80 54 62.5 31.2 2.
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