HY1804D
HY1804D is N-Channel MOSFET manufactured by HOOYI.
- Part of the HY1804 comparator family.
- Part of the HY1804 comparator family.
HY1804D/U/S
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
IDM Pulsed Drain Current
- ID Continuous Drain Current
PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
L=0.3m H
Note
- Repetitive rating ; pulse width limiited by junction temperature
- - Drain current is limited by junction temperature
- -
- VD=32V
Rating
40 ±20 175 -55 to 175 80
320-
- 80 54 62.5 31.2 2.4 110 340-
- -
Electrical Characteristics
(T C
=
25°C
Unless
Otherwise
Noted)
Unit
V °C °C A
W °C/W °C/W m J
Symbol
Parameter
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
RDS(ON)...