This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HY3503P |
|---|---|
| Datasheet | HY3503P HY3503 Datasheet (PDF) |
| File Size | 532.35 KB |
| Manufacturer | HOOYI |
| Description | N-Channel MOSFET |
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HY3503P/B Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C RθJC -Junction to Case RθJA...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
HY3503C2 | N-Channel Enhancement Mode MOSFET | HUAYI |
| Part Number | Description |
|---|---|
| HY3503 | N-Channel MOSFET |
| HY3503B | N-Channel MOSFET |
| HY3506P | N-Channel Enhancement Mode MOSFET |
| HY3506W | N-Channel Enhancement Mode MOSFET |
| HY3003 | N-Channel MOSFET |
| HY3003B | N-Channel MOSFET |
| HY3003P | N-Channel MOSFET |
| HY3007B | N-Channel Enhancement Mode MOSFET |
| HY3007M | N-Channel Enhancement Mode MOSFET |
| HY3007P | N-Channel Enhancement Mode MOSFET |
