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HY3503P - N-Channel MOSFET

This page provides the datasheet information for the HY3503P, a member of the HY3503 N-Channel MOSFET family.

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Datasheet Details

Part number HY3503P
Manufacturer HOOYI
File Size 532.35 KB
Description N-Channel MOSFET
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HY3503P/B Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy,Single Pulsed L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=24V Rating 30 ±20 175 -55 to 175 150 570** 150 117 150 75 1.0 62.
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