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HY5608A Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HY5608W/A N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY5608 HY5608 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish;

which are fully pliant with RoHS.

HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.

Key Features

  • 80V/360A RDS(ON) = 1.5 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

HY5608A Distributor