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HY5608A - N-Channel Enhancement Mode MOSFET

Download the HY5608A datasheet PDF. This datasheet also covers the HY5608W variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY5608 HY5608 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die at

Key Features

  • 80V/360A RDS(ON) = 1.5 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5608W-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY5608A
Manufacturer HOOYI
File Size 3.47 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY5608A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY5608 HY5608 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.