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HY5608W - N-Channel Enhancement Mode MOSFET

General Description

S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY5608 HY5608 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die at

Key Features

  • 80V/360A RDS(ON) = 1.5 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number HY5608W
Manufacturer HOOYI
File Size 3.47 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY5608W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY5608 HY5608 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.