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HYG028N10NS1B - N-Channel Enhancement Mode MOSFET

Download the HYG028N10NS1B datasheet PDF. This datasheet also covers the HYG028N10NS1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P G028N10 XYMXXXXXX B G028N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYG028N10NS1P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG028N10NS1B
Manufacturer HOOYI
File Size 1.41 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG028N10NS1B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG028N10NS1P/B Feature  100V/230A RDS(ON)=2.6mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply  Motor Control N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P G028N10 XYMXXXXXX B G028N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.