Datasheet Details
| Part number | HYG028N10NS1B |
|---|---|
| Manufacturer | HOOYI |
| File Size | 1.41 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG028N10NS1B HYG028N10NS1P Datasheet (PDF) |
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Overview: HYG028N10NS1P/B Feature 100V/230A RDS(ON)=2.6mΩ (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) Applications Power Switching application .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HYG028N10NS1B |
|---|---|
| Manufacturer | HOOYI |
| File Size | 1.41 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG028N10NS1B HYG028N10NS1P Datasheet (PDF) |
|
|
|
TO-220FB-3L TO-263-2L Ordering and Marking Information P G028N10 XYMXXXXXX B G028N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
HYG028N10NS1W | N-Channel Enhancement Mode MOSFET | HUAYI |
| Part Number | Description |
|---|---|
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