HYG028N10NS1P - N-Channel Enhancement Mode MOSFET

HOOYI

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P G028N10 XYMXXXXXX B G028N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish

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HYG028N10NS1P n-channel enhancement mode mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HYG028N10NS1P
Manufacturer	HOOYI
File Size	1.41 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HYG028N10NS1P Datasheet

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Full PDF Text Transcription (Reference)

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HYG028N10NS1P/B Feature  100V/230A RDS(ON)=2.6mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply  Motor Control N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P G028N10 XYMXXXXXX B G028N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.