HYG028N10NS1P datasheet by HOOYI.
| Part number | HYG028N10NS1P |
|---|---|
| Datasheet | HYG028N10NS1P-HOOYI.pdf |
| File Size | 1.41 MB |
| Manufacturer | HOOYI |
| Description | N-Channel Enhancement Mode MOSFET |
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HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully pliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
View HYG028N10NS1W datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
HYG028N10NS1W | N-Channel Enhancement Mode MOSFET | HUAYI |
| Part Number | Description |
|---|---|
| HYG028N10NS1B | N-Channel Enhancement Mode MOSFET |
| HYG028N10NS1B6 | N-Channel Enhancement Mode MOSFET |
| HYG023N04LS1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04LS1P | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1D | N-Channel Enhancement Mode MOSFET |
| HYG012N03LR1B | N-Channel Enhancement Mode MOSFET |
| HYG012N03LR1P | N-Channel Enhancement Mode MOSFET |
| HYG012N08NS1TA | N-Channel Enhancement Mode MOSFET |
| HYG015N10NS1TA | N-Channel Enhancement Mode MOSFET |
| HYG016N04LS1B | N-Channel Enhancement Mode MOSFET |
