Datasheet Details
| Part number | HYG028N10NS1B6 |
|---|---|
| Manufacturer | HOOYI |
| File Size | 1.50 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG028N10NS1B6-HOOYI.pdf |
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Overview: HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET Feature 100V/230A RDS(ON)=2.4mΩ (typ.
| Part number | HYG028N10NS1B6 |
|---|---|
| Manufacturer | HOOYI |
| File Size | 1.50 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG028N10NS1B6-HOOYI.pdf |
|
|
|
Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G028N10 XYMXXXXXX Package Code B6 :TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-Channel MOSFET Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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