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HYG028N10NS1B6 - N-Channel Enhancement Mode MOSFET

General Description

Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G028N10 XYMXXXXXX Package Code B6 :TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-Channel MOSFET Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are ful

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Datasheet Details

Part number HYG028N10NS1B6
Manufacturer HOOYI
File Size 1.50 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG028N10NS1B6 Datasheet

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Full PDF Text Transcription (Reference)

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HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET Feature  100V/230A RDS(ON)=2.4mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply  Motor Control Pin Description Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G028N10 XYMXXXXXX Package Code B6 :TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-Channel MOSFET Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.