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9926A - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • VDS (V) = 20V ID = 7A RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 33mΩ (VGS = 2.5V) RDS(ON) < 42mΩ (VGS = 1.8V) 9926A S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOP-8 top view D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 2.

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Datasheet Details

Part number 9926A
Manufacturer HOTTECH
File Size 1.52 MB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet 9926A Datasheet

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Plastic-Encapsulate Mosfets Dual N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 20V ID = 7A RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 33mΩ (VGS = 2.5V) RDS(ON) < 42mΩ (VGS = 1.8V) 9926A S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOP-8 top view D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 7 6 40 2 1.44 -55 to 150 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA 48 74 62.