9926A - Dual N-Channel MOSFET

Datasheet Summary

Features

6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient.
Maximum Junction-to-Foot (Drain) t 10 sec Steady State Steady State.

Tuofeng Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	9926A
Manufacturer	Tuofeng Semiconductor
File Size	221.46 KB
Description	Dual N-Channel MOSFET
Datasheet	9926A Datasheet
Additional preview pages of the 9926A datasheet.

📁 Similar Datasheet

9926A - FDW9926A (Fairchild Semiconductor)
9926A - Common Drain N-Channel Enhancement Mode MOSFET (ChipSourceTek)
9926A - Dual N-Channel MOSFET (VBsemi)
9926A - Dual N-Channel Enhancement Mode Field Effect Transistor (HOTTECH)

Other Datasheets by Tuofeng Semiconductor

9926B - Dual N-Channel MOSFET

Full PDF Text Transcription

▶ Click to expand full text

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926A Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6 30 2.0 1.25 1.3 0.

Published: Aug 28, 2016 |