Datasheet4U Logo Datasheet4U.com

9926B - Dual N-Channel MOSFET

Datasheet Summary

Features

  • 6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6.5 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient.
  • Maximum Junction-to-Foot (Drain) t 10 sec Steady State Steady St.

📥 Download Datasheet

Datasheet preview – 9926B

Datasheet Details

Part number 9926B
Manufacturer Tuofeng Semiconductor
File Size 309.08 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet 9926B Datasheet
Additional preview pages of the 9926B datasheet.
Other Datasheets by Tuofeng Semiconductor

Full PDF Text Transcription

▶ Click to expand full text
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6.5 30 2.0 1.25 1.3 0.
Published: |