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S9014W - NPN Transistor

Key Features

  • Complementary To S9015W. Excellent HFE Linearity. Power dissipation. (P C=0.2W) Marking:J6.

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Datasheet Details

Part number S9014W
Manufacturer HOTTECH
File Size 158.49 KB
Description NPN Transistor
Datasheet download datasheet S9014W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Plastic-Encapsulate Transistors FEATURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W) Marking:J6 MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Storage Temperature unless otherwise noted) Symbol Value VCBO 50 VCEO 45 VEBO 5 IC 100 PC 200 Tstg -55 to +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC=100μA,IE=0 Collector-emitter breakdown voltage VCEO IC=0.