CS3N80FA9 datasheet by HUAJING MICROELECTRONICS.
| Part number | CS3N80FA9 |
|---|---|
| Datasheet | CS3N80FA9-HUAJINGMICROELECTRONICS.pdf |
| File Size | 827.56 KB |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | Silicon N-Channel Power MOSFET |
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： VDSS 800 CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.0 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS...
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