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CS3N80FA9 Datasheet Silicon N-Channel Power MOSFET

Manufacturer: HUAJING MICROELECTRONICS

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Datasheet Details

Part number CS3N80FA9
Manufacturer HUAJING MICROELECTRONICS
File Size 827.56 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N80FA9 Datasheet

General Description

： VDSS 800 CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.0 enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-220F, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET ○R CS3N80F A9 General.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

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