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Silicon N-Channel Power MOSFET
CS3N80 A8
○R
General Description：
CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
800 3 75 4.0
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which accords
with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
CS3N80A8 Datasheet
