• Part: HFF7N60
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: HUASHAN ELECTRONIC
  • Size: 640.25 KB
Download HFF7N60 Datasheet PDF
HFF7N60 page 2
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HFF7N60 page 3
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HFF7N60 Key Features

  • 7A, 600V(See Note), RDS(on) <1.2Ω@VGS = 10 V
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS pliant
  • Maximum Ratings(Ta=25℃ unless otherwise specified)
  • Thermal Characteristics
  • Electrical Characteristics(Ta=25℃ unless otherwise specified)
  • Body Leakage
  • On Delay Time