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HY1904B - N-Channel Enhancement Mode MOSFET

Download the HY1904B datasheet PDF. This datasheet also covers the HY1904P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G DS G G DS TO-220FB-3L TO-220FB-3S TO-263-2L Applications Switching application Power Management for Inverter Systems Ordering and Marking Information P B M HY1904 HY1904 HY1904 YYXXXJWW G YYXXXJWW G YYXXXJWW G N-Channel MOSFET Package Code P:TO-220FB-3L M:TO-220FB-3S Dat

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Note: The manufacturer provides a single datasheet file (HY1904P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1904B
Manufacturer HUAYI
File Size 1.16 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1904B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1904P/B/M Feature  40V/90A RDS(ON)= 4.7mΩ(typ.)@VGS = 10V RDS(ON)= 5.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G DS G G DS TO-220FB-3L TO-220FB-3S TO-263-2L Applications  Switching application  Power Management for Inverter Systems Ordering and Marking Information P B M HY1904 HY1904 HY1904 YYXXXJWW G YYXXXJWW G YYXXXJWW G N-Channel MOSFET Package Code P:TO-220FB-3L M:TO-220FB-3S Date Code YYXXX WW B:TO-263-2L Assembly Material G:Lead Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.