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HY1904U - N-Channel Enhancement Mode MOSFET

Download the HY1904U datasheet PDF. This datasheet also covers the HY1904D variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-252-2L TO-251-3L TO-251-3S Applications Power

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Note: The manufacturer provides a single datasheet file (HY1904D-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1904U
Manufacturer HOOYI
File Size 1.34 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1904U Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems Ordering and Marking Information N-Channel MOSFET DU HY1904 HY1904 YYXXXJWW G YYXXXJWW G V HY1904 YYXXXJWW G Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code YYXXX WW Assembly Material G:Halogen Free Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.