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HY1904P - N-Channel Enhancement Mode MOSFET

General Description

DS G DS G G DS TO-220FB-3L TO-220FB-3S TO-263-2L Applications Switching application Power Management for Inverter Systems Ordering and Marking Information P B M HY1904 HY1904 HY1904 YYXXXJWW G YYXXXJWW G YYXXXJWW G N-Channel MOSFET Package Code P:TO-220FB-3L M:TO-220FB-3S Dat

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Datasheet Details

Part number HY1904P
Manufacturer HUAYI
File Size 1.16 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1904P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1904P/B/M Feature  40V/90A RDS(ON)= 4.7mΩ(typ.)@VGS = 10V RDS(ON)= 5.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G DS G G DS TO-220FB-3L TO-220FB-3S TO-263-2L Applications  Switching application  Power Management for Inverter Systems Ordering and Marking Information P B M HY1904 HY1904 HY1904 YYXXXJWW G YYXXXJWW G YYXXXJWW G N-Channel MOSFET Package Code P:TO-220FB-3L M:TO-220FB-3S Date Code YYXXX WW B:TO-263-2L Assembly Material G:Lead Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.