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HY1904P Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HY1904P/B/M Feature  40V/90A RDS(ON)= 4.7mΩ(typ.)@VGS = 10V RDS(ON)= 5.7mΩ(typ.)@VGS = 4.

Datasheet Details

Part number HY1904P
Manufacturer HUAYI
File Size 1.16 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY1904P-HUAYI.pdf

General Description

DS G DS G G DS TO-220FB-3L TO-220FB-3S TO-263-2L Applications  Switching application  Power Management for Inverter Systems Ordering and Marking Information P B M HY1904 HY1904 HY1904 YYXXXJWW G YYXXXJWW G YYXXXJWW G N-Channel MOSFET Package Code P:TO-220FB-3L M:TO-220FB-3S Date Code YYXXX WW B:TO-263-2L Assembly Material G:Lead Free Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HY1904P Distributor