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HY1904V Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HY1904D/U/V Feature.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

 40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS pliant) N-Channel Enhancement Mode MOSFET Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems Ordering and Marking Information N-Channel MOSFET DU HY1904 HY1904 YYXXXJWW G YYXXXJWW G V HY1904 YYXXXJWW G Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code YYXXX WW Assembly Material G:Halogen Free Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully pliant with RoHS.

HOOYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HY1904V Distributor