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HY1904M Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HY1904P/B/M Feature  40V/90A RDS(ON)= 4.7mΩ(typ.)@VGS = 10V RDS(ON)= 5.7mΩ(typ.)@VGS = 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

DS G DS G G DS TO-220FB-3L TO-220FB-3S TO-263-2L Applications  Switching application  Power Management for Inverter Systems Ordering and Marking Information P B M HY1904 HY1904 HY1904 YYXXXJWW G YYXXXJWW G YYXXXJWW G N-Channel MOSFET Package Code P:TO-220FB-3L M:TO-220FB-3S Date Code YYXXX WW B:TO-263-2L Assembly Material G:Lead Free Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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