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HY5110A - N-Channel Enhancement Mode MOSFET

Download the HY5110A datasheet PDF. This datasheet also covers the HY5110W variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

S D G TO-247-3L S D G TO-3P-3L Applications

Power Management for Inverter Systems.

Key Features

  • 100V/316A RDS(ON)=2.1 m Ω (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5110W-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY5110A
Manufacturer HUAYI
File Size 2.62 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY5110A Datasheet

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Other Datasheets by HUAYI

Part Number Description
HY5110NA2W N-Channel Enhancement Mode MOSFET
HY5110W N-Channel Enhancement Mode MOSFET
HY5208A N-Channel Enhancement Mode MOSFET
HY5208W N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY5110W/A N-Channel Enhancement Mode MOSFET Features • 100V/316A RDS(ON)=2.1 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247-3L S D G TO-3P-3L Applications • Power Management for Inverter Systems. D G N-Channel MOSFET S Ordering and Marking Information W A HY5110 HY5110 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.