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HY5110W - N-Channel Enhancement Mode MOSFET

General Description

S D G TO-247-3L S D G TO-3P-3L Applications

Power Management for Inverter Systems.

Key Features

  • 100V/316A RDS(ON)=2.1 m Ω (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY5110W
Manufacturer HUAYI
File Size 2.62 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY5110W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY5110W/A N-Channel Enhancement Mode MOSFET Features • 100V/316A RDS(ON)=2.1 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247-3L S D G TO-3P-3L Applications • Power Management for Inverter Systems. D G N-Channel MOSFET S Ordering and Marking Information W A HY5110 HY5110 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.