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HY5110NA2W - N-Channel Enhancement Mode MOSFET

General Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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Datasheet Details

Part number HY5110NA2W
Manufacturer HUAYI
File Size 543.67 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY5110NA2W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY5110NA2W Feature ⚫ 100V/295A RDS(ON)=2.4mΩ (typ.) @ VGS = 10V ⚫ 100% Avalanche Tested ⚫ Reliable and Rugged ⚫ Lead-Free and Green Devices Available (RoHS Compliant) Applications ⚫ Power Switching application ⚫ BMS N-Channel Enhancement Mode MOSFET Pin Description TO-247A-3L Ordering and Marking Information W HY5110 XYMXXXXXX N-Channel MOSFET Package Code W :TO-247A-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.